Resist Wiki 微影阻劑百科
The Resist Wiki is a knowledge platform covering current technologies of micro electronics which is permanently updated to add further information from our research and development activities.
We have broken it down into the six topics “basics, e-beam resist, photoresist, protective resist, bottom resist and process chemicals” so that you can quickly find what you are looking for.
Have fun while reading!
微影阻劑百科為一資訊平台,涵蓋現有技術及持續的研究開發. 內容分為六大主題: 阻劑基礎, 電子束微影, 光阻, 保護塗層,底層阻劑及微影製程化學品.
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The content is from product principals, ALLRESIST and translate into Chinese. You may visit ALLRESIST from link below.
內容取材自原廠並翻譯. 可自下方連結至原廠網站
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The fabrication of T-gates in three-layer processes involves careful control of resist coatings and … read 閱讀全文
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EUV-lithography (EUVL) uses extreme ultraviolet radiation for semiconductor industry, enabling small… read 閱讀全文
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Medusa 82, a standard resist, can have its sensitivity increased by the addition of a photoacid gene… read 閱讀全文
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The Medusa 82 negative resist offers high resolution and plasma etching stability in oxygen, compara… read 閱讀全文
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Medusa 82’s sensitivity can be increased by adding photoacid generators (PAGs) or employing a post-e… read 閱讀全文
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The new special resist SX AR-N 4810/1 is a chemically amplified photoresist based on PMMA that offer… read 閱讀全文
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A new high-temperature resistant negative resist, SX AR-N 4340/6, based on polyhydroxystyrene, is de… read 閱讀全文
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A negative polyimide photoresist has been developed as an alternative to positive polyimide resist, … read 閱讀全文
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The negative two-layer lift-off system offers enhanced thermal stability and distinct undercut gener… read 閱讀全文
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The article discusses the use of adhesion promoter AR 300-80 and different silicone-containing compo… read 閱讀全文
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Summary: For the development of AR-P 5320 positive photoresist, AR 300-26 developer is recommended, … read 閱讀全文
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The article discusses the evaluation of new developer systems for the highly sensitive e-beam resist… read 閱讀全文
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The new developer X AR 600-50/2 is highly sensitive and selective for AR-P 617, with minimal dark er… read 閱讀全文
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In the CiS Institute for Microsensors, a new spray coating procedure was developed for deep silicon … read 閱讀全文
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The new remover AR 300-76 offers a safer alternative to NEP-containing removers. With a flash point … read 閱讀全文
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A new solvent remover, AR 600-71, containing 1.3-dioxolane and 1-methoxy-2-propanol effectively remo… read 閱讀全文
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This content discusses the use of NIR-laser structurable photoresists, highlighting the addition of … read 閱讀全文
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The content discusses the one-layer and two-layer lift-off processes for creating structures require… read 閱讀全文
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The main components of resists are solvents, with contents ranging from 50% to 99%. Early resists co… read 閱讀全文
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The process for patterning the conductive protective coating Electra 92 involves coating a negative … read 閱讀全文
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