Resist Wiki 微影阻劑百科
The Resist Wiki is a knowledge platform covering current technologies of micro electronics which is permanently updated to add further information from our research and development activities.
We have broken it down into the six topics “basics, e-beam resist, photoresist, protective resist, bottom resist and process chemicals” so that you can quickly find what you are looking for.
Have fun while reading!
微影阻劑百科為一資訊平台,涵蓋現有技術及持續的研究開發. 內容分為六大主題: 阻劑基礎, 電子束微影, 光阻, 保護塗層,底層阻劑及微影製程化學品.
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The content is from product principals, ALLRESIST and translate into Chinese. You may visit ALLRESIST from link below.
內容取材自原廠並翻譯. 可自下方連結至原廠網站
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CSAR structures on glass The use of a combination of CS read 閱讀全文
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Determining the conductivity of Electra 92 layers on gl read 閱讀全文
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Developer AR 300-35 is recommended for structuring photoresists on alkali-sensitive substrates, such… read 閱讀全文
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The development of exposed CSAR 62 resist films is typically done through immersion development with… read 閱讀全文
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The development cascade is recommended for optimal performance and cleanliness during immersion deve… read 閱讀全文
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The content discusses the use of chemically enhanced negative resist without cross-linking in applic… read 閱讀全文
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The content discusses development procedures for removing exposed areas of positive-tone resists and… read 閱讀全文
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The e-beam resist AR-N 7720, developed by Allresist, allows for the production of diffractive optics… read 閱讀全文
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The content discusses the dilution of photo resists, particularly the use of PMA as a solvent and th… read 閱讀全文
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The size and shape of structures in negative resists are dose-dependent, with overexposure causing w… read 閱讀全文
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Electron beam lithography (EBL) involves both mask-based and maskless writing procedures. In older s… read 閱讀全文
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Electron beam lithography (EBL) is a significant procedure for producing microelectronic circuits an… read 閱讀全文
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A variant of Electra 92 is optimized for novolac-based e-beam resists such as AR-N 7520, AR-N 7700, … read 閱讀全文
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Electron beam lithography (EBL) systems are composed of essential components such as the electron so… read 閱讀全文
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Electron beam lithography (EBL) systems consist of components such as the electron source, electro-o… read 閱讀全文
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The structure of the image reversal resist AR-U 4060 provides increased resistance against organic s… read 閱讀全文
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Evaluation of various developers for e-beam exposed CSA read 閱讀全文
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Dr. Lothar Hahn from the Karlsruhe Institute of Technology assessed various developers for CSAR 62, … read 閱讀全文
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The study at TU Braunschweig focused on the fabrication of well-defined resist architectures with ve… read 閱讀全文
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