Resist Wiki 微影阻劑百科
The Resist Wiki is a knowledge platform covering current technologies of micro electronics which is permanently updated to add further information from our research and development activities.
We have broken it down into the six topics “basics, e-beam resist, photoresist, protective resist, bottom resist and process chemicals” so that you can quickly find what you are looking for.
Have fun while reading!
微影阻劑百科為一資訊平台,涵蓋現有技術及持續的研究開發. 內容分為六大主題: 阻劑基礎, 電子束微影, 光阻, 保護塗層,底層阻劑及微影製程化學品.
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The content is from product principals, ALLRESIST and translate into Chinese. You may visit ALLRESIST from link below.
內容取材自原廠並翻譯. 可自下方連結至原廠網站
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The SX AR-N 7730/37 is a chemically amplified, highly sensitive negative e-beam resist with improved… read 閱讀全文
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The content discusses the process parameters and resolution of chemically enhanced negative resist A… read 閱讀全文
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The provided content discusses chemically enhanced negative resist, particularly focusing on substra… read 閱讀全文
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Collapse of extreme high-resolution e-beam resist structures A typical problem arising from an extre… read 閱讀全文
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The content describes coloured negative photoresists used in the optical industry and analytics. FUJ… read 閱讀全文
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Photoresists used in microelectronics and microsystems technology create µm- and sub-µm structures. … read 閱讀全文
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The conductivity of resist layers in e-beam lithography is affected by temperature and air humidity.… read 閱讀全文
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The patterning of negative resists is achieved through cross-linking agents, such as radical starter… read 閱讀全文
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CSAR 62 Avoidance of particles during large-area exposures During the exposure and subsequent develo… read 閱讀全文
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CSAR 62 for EUV applications In addition to the use in e-beam lithography, the highly sensitive e-be… read 閱讀全文
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CSAR 62 for thick films Intensive plasma etching applications for the manufacture of deep etching st… read 閱讀全文
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CSAR 62 lift-off for thick layers For special applications in which metal layers with a thickness of read 閱讀全文
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CSAR 62 nanostructures written at 100 kV Applying an acceleration voltage of 100 kV has the advantag… read 閱讀全文
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Use of CSAR 62 for the manufacture of nanostructures on GaAs substrates CSAR 62 is routinely used to read 閱讀全文
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CSAR 62 single layer lift-off system With our new development e-beam resist AR-P 6200 (CSAR 62), ver… read 閱讀全文
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Thick CSAR 62 A few applications like e.g. the manufacture of deep etched structures by plasma etchi… read 閱讀全文
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CSAR 62 thick layers The e-beam resist CSAR 62 has so far been offered in three standard versions:AR… read 閱讀全文
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CSAR 62 – Development at low temperatures The sensitivity of CSAR 62 is strongly influenced by the c… read 閱讀全文
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CSAR 62 – Experimental studies on new, sensitive developers CSAR 62 layers can also be patterned by … read 閱讀全文
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CSAR 62 – Mechanism of action By comparison with PMMA resists, CSAR 62 is characteriz… read 閱讀全文
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