Resist Wiki 微影阻劑百科
The Resist Wiki is a knowledge platform covering current technologies of micro electronics which is permanently updated to add further information from our research and development activities.
We have broken it down into the six topics “basics, e-beam resist, photoresist, protective resist, bottom resist and process chemicals” so that you can quickly find what you are looking for.
Have fun while reading!
微影阻劑百科為一資訊平台,涵蓋現有技術及持續的研究開發. 內容分為六大主題: 阻劑基礎, 電子束微影, 光阻, 保護塗層,底層阻劑及微影製程化學品.
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The content is from product principals, ALLRESIST and translate into Chinese. You may visit ALLRESIST from link below.
內容取材自原廠並翻譯. 可自下方連結至原廠網站
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E-beam resists are used for fabricating highly integrated circuits and masks, allowing the realizati… read 閱讀全文
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Photoresists, used in microelectronics and microsystems, contain film-forming agents and light-sensi… read 閱讀全文
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E-beam resists such as PMMA, copolymer, and styrene acrylate are not light-sensitive in the visible … read 閱讀全文
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Photoresists are light-sensitive and their stability depends on storage conditions. They should be s… read 閱讀全文
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Age-related changes can significantly impact the quality of photoresists, causing darkening, reduced… read 閱讀全文
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The optimal pre-treatment of substrates for e-beam resist application depends on the substrate condi… read 閱讀全文
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E-beam resists exhibit varying adhesion strengths to different wafers. While PMMA-, copolymer, and s… read 閱讀全文
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The optimal pre-treatment of substrates for photoresists is crucial for adhesive strength. Silicon, … read 閱讀全文
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E-beam resists are exposed using short-wavelength electrons for excellent resolution. Optimum exposu… read 閱讀全文
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Photoresist adhesion varies on different wafers. Substrates such as silica, silicon nitride, and bas… read 閱讀全文
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The optimum coating parameters for photoresists to achieve good film images involve spin speeds betw… read 閱讀全文
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E-beam resists require optimal developers for effective patterning. Factors like developer concentra… read 閱讀全文
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E-beam resist films can be removed using polar solvents like AR 300-12, AR 600-01, AR 600-07, and AR… read 閱讀全文
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Air bubbles can form in photoresist films due to agitation, temperature differences, or improper coa… read 閱讀全文
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The softbake of photoresist films, performed at 90 – 100 °C, serves to dry the films of residual sol… read 閱讀全文
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E-beam resists can achieve resolutions of 2 nm theoretically and up to 10 nm with CSAR resists. PMMA… read 閱讀全文
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Photoresists are exposed using masks in suitable exposure systems. They are sensitive in the broad b… read 閱讀全文
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E-beam resists like AR 6000 and AR 7000 series show varying etch resistance in processes such as arg… read 閱讀全文
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E-beam resists show varying resistance to strong acids. Concentrated oxidizing acids like sulfuric a… read 閱讀全文
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Photoresist developers are key to achieving reproducible results in lithography. Factors like concen… read 閱讀全文
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