AR-P 3100 series

AR-P 3100 series positive photoresist

Adhesion enhanced positive photoresist

…

AR-P 3100 series product brief 產品說明
AR-P 3100 系列，產品配方強化與基板介面的接著度,適合各類精密微影製程的正型阻劑。
目前產品依配方與厚度範圍有如下序號：

Property

AR-P 3110

AR-P 3120

AR-P 3170

Film thickness@4000rpm

1 um

0.55 um

0.12 um

Resolution

0.5 um

0.4 um

Contrast

3.0

Flash point

46 ℃

Storage 6 months^*¹

10 – 18 ℃¹

Production status^*²

routine¹

Product is guaranteed 6 months shelf life from the date of sale if stored correctly.
在正確儲存條件下，產品保證的有效期限為銷售日起６個月。
Product can also be used without guaranteed until the date indicated on the label.
在無提供保證的情況下，產品可使用至標籤上所示的有效期。 ↩︎
Product status：
routine：產品固定排程生產，交貨期約２－４週。
on-demand：產品無固定排程生產，需先詢價。可能有最小訂購量(MOQ)或需待批次生產排程。 ↩︎

產品編碼說明

…

Packing & shipping 產品包裝與出貨

packing 產品包裝

✅ 250 ml/瓶

✅ 1 L/瓶

其它包裝可依需求研擬增加

✏️ 價格詢問

✏️ 其它諮詢

shipping 產品出貨

✅ 2 – 4 週。德國運出。

📤 AR-P 3100 series GHS label

…

Product features 產品特性

broadband UV, i-line, g-line
曝光波長：寬頻紫外線, i-line (365nm) , g-line (436nm)
high photosensitivity, high resolution
高敏感度,高解析度
strong adhesion to critical glass/chromium surfaces for extreme stresses during wet-chemical etching processes
對玻璃,鉻等介面接著度良好,適合濕蝕刻製程
for the production of CD masters and lattice structures
適合CD母片及各式點陣結構
AR-P 3170 also suitable for laser interference lithography
AR-P 3170可用於雷射干涉微影
plasma etching resistant
耐電漿蝕刻
combination of novolac and naphthoquinone diazide
主要成份為酚醛樹酯及叠氮基萘醌
safer solvent PGMEA
使用較安全溶劑丙二醇甲醚醋酸酯

…

Product properties 產品物性

…

AR-P 3100 series Spin curve 塗佈曲線

…

Structure and resolution 結構與解析度

Structure resolution

AR-P 3120:
Film thickness 0.6 μm Resist structures 0.38 μm L/S

Resist structure

AR-P 3170:
70-nm-lines generated by laser interference lithography

Process parameters

Substrate	Si 4″ wafer
Soft bake	95℃ x 90 sec, hot plate
Exposure	i-line stepper (NA: 0.65)
Development	AR 300-47, 1:1, 60 sec, 20℃

Process chemicals

Adhesion promoter	AR 300-80
Developer	AR 300-26 / AR 300-47
Thinner	AR 300-12
Remover	AR 300-76 / AR 300-73

…

Process baseline 製程參數

This diagram shows exemplary process steps for AR-P 3100 resists. All specifications are guideline values which must be adapted to own specific conditions. For further information on processing, 👉“ Detailed instructions for optimum processing of photoresists”. For recommendations on wastewater treatment and general safety instructions, 👉”General product information on Allresist photoresists”.
表列為AR-P 3100系列產品製程參數的範例。所有參數為參考值,使用者應依設備環境實際狀況加以調整。

Development recipe

Resist	Developer
Resist	AR 300-26	AR 300-35	AR 300-47
AR-P 3110	1 : 2 to 1 : 3	pure	6 : 1
AR-P 3120	1 : 3	5 : 1	5 : 1
AR-P 3170	1 : 4	2 : 1	3 : 1

…

Reference data 參考資料

Linearity

Up to a structure width of 0.38, a very good agreement is obtained. REM measurement: Thickness 560 nm, i-line stepper (NA: 0.65 NA), Developer AR 300-47 1 : 1.

Optimum exposure dose

Underexposure leads in the case of complete development (more than 55 ml/cm2) to narrower trenches, while overexposure results in a widening of trenches.

Focus variation