SX AR-N 8400 series (Medusa 84 SiH) HSQ e-Beam resist
high resolution, process stable, hydrogen silsesquioxane negative resist
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Product brief 產品簡介
SX AR-N 8400系列, 實驗代號Medusa 84 SiH, 為氫倍半矽氧烷類(HSQ – Hydrogen silsesquioxane)負型電子束微影阻劑。
與傳統HSQ相較, Medusa 84 SiH產品穩定性佳，有效期限較長，製程穩定等優點。產品系列目前有:
SX AR-N 8400.04
SX AR-N 8400.08
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Product series & code 產品比較及編碼說明：
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Packing 產品包裝:
✅ 100 ml /瓶
✅ 250 ml /瓶
✅ 1 L /瓶
其它包裝可依客戶需求增加.
Shipping 出貨:
✅ 2 – 4 週： 徳國運出
❎ 1 週： 國內庫存
(目前暫無國內庫存)
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Product Features 產品特性
- Hydrogen silsesquioxane dissolved in butyl acetate
主要成份為氫基倍半矽氧烷溶於醋酸正丁酯 - High resolution e-beam resist
高解析度電子束微影阻劑 - Improved shelf life, as butyl acetate reduces gelling and particle formation
使用醋酸正丁酯為溶劑以減少結塊及顆粒的形成，有效的改善有效期限 - Improved stability due to the addition of stabilizer molecules
添加穩定劑使產品更形穩定 - Elimination of the presumably carcinogenic solvent MIBK (methyl isobutyl ketone)
不使用可能致癌的甲基異丁酮(MIBK)溶劑
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Product Properties 產品物性
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Spin curve 塗佈曲線
● SX AR-N 8400.04
● SX AR-N 8400.08
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Structure resolution
6 nm lines developed with 1% KOH. The wafer was stored in vacuum for10 days between coating and lithography and showed no loss of processability or degradation.© Raith Dortmund
Resist structures
100 nm line/space structures written on silicon at 1000 μC/cm² @ 100 kV and developed with AR 300-73 (6.5% TMAH solution).
© J. Hohmann, KIT-IMT Karlsruhe
Process parameters
| Substrate | 4″ Si wafer |
| Soft bake | 90℃x1 min, hot plate |
| Exposure | Raith Pioneer 30 KV |
| Development | AR 300-73 60-90 sec 23℃ |
Process chemicals
| Adhesion promoter | AR 300-80 new |
| Developer | AR 300-44 / AR 300-73 |
| Thinner | Butyl acetate VLSI-grade |
| Stopper / Remover | DI-H2O / BOE or 1% HF |
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Process baseline 製程參數
This diagram shows exemplary process steps for SX AR-N 8400 series resists. All specifications are guideline values
which have to be adapted to own specific conditions. For further information on processing, 👉“Detailed instructions for optimum processing of e-beam resists”. For recommendations on waste water treatment and general safety instructions,
👉”General product information on Allresist e-beam resists”.
表列為SX AR-N 8400系列產品製程參數的範例. 所有參數為參考值,使用者應依設備環境實際狀況加以調整
| Process | AR-N 8400.08 |
Coating | 100 nm@4000 rpm x 60 min |
Soft bake (± 1℃) | 90 ℃ x 1 min hot plate, or 90 ℃ x 5 min convection oven |
Conductive coating | AR-PC 5094.02 40nm@4000rpm x 30sec for insulating substrate (quartz, glass, GaAs) |
2nd soft bake | 90 ℃ x 2 min hot plate |
eBeam exposure | D0 : 250uC/cm2 (30 kV Raith Pioneer) |
Removing | AR-PC 5094.02 conductive layer remove DI-H2O 60 sec |
| Development (puddle) 21-23 ℃ ± 0.5℃  | AR 300-44 developer for SX AR-N 8400.08 AR 300-73 for optimized contrast Rinse: DI-H2O 30 sec |
Hard bake (optional) | 250℃ x 30 min hot plate, or 250℃ x 30 convection oven for improve plasma etching resistance |
User’s specific process | deposition, etching … |
Removing | BOE 5:1 or 1% HF |
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Note on stability 穩定性說明
Coated substrates can be stored under normal conditions and processed without loss of sensitivity or resolution even after several days. The use of vacuum or inert gas is not necessary.
已塗佈阻劑之基板在正常情況下仍可維持其敏感度或解析度至數日。(無需置於真空或鈍氣環境）。
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Contrast curve
Contrast curves of Medusa 84 SiH with a dwell time of 3 days between irradiation and development. Developing with a higher TMAH concentration leads to improved contrast with only a slightly higher dose.
Medusa 84 SiH曝光後靜置3天再進行顯影，以較高濃度TMAH顯影劑僅需些微調整曝光劑量。
Grey tone application
Grey scale structures written on silicon with 30 kV. The top rowshows the squares with the dose used in μC/cm². The stylus profilometer shows the remaining height in Å after development with 2.38 % TMAH. © Zsuzsanna Márton, ELI ALPS Hungary
於Si基板上以30kV與2.38% TMAH寫出的灰階結構。下圖上方顯示正方型結構與對應的曝光劑量。圖下方顯示其對應的殘餘厚度。
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Structures with a high aspect ratio 高深寬比結構範例
Left/ right: Nanorods with a spacing of 1 μm written on silicon at 2000 μC/cm² @ 50kV and developed with AR 300-44 (2.38% TMAH). Aspect ratios of up to 10 were achieved. © R. Stöhr, ZAQuant Univ. Stuttgart
下圖範例為高深寬比(10) ：於矽基板以劑量2000 uC/cm2 @ 50kV，AR 300-44 (2.38% TMAH)寫出(L: 400nm/W: 40nm)間距為1 um的奈米棒。
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Medusa 84 SiH on quartz with AR-PC 5094.02 導電塗層搭配HSQ範例
Siemens star written on quartz with the new conductive coating Electra 92 (AR-PC 5094.02) spun on to prevent charge build-up. This variant of Electra 92, specially developed for HSQ, has excellent coating and adhesion properties. © B. Drent, AMOLF NanoLab Amsterdam
Electra 92 (AR-PC 5094.02)為新版導電塗層，對HSQ有良好塗佈特性及黏著度。
下圖為Medusa 84 SiH搭配新版Electra 92於石英基板寫出西門子星標的範例。
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