SX AR-N 8400 series

SX AR-N 8400 series (Medusa 84 SiH) HSQ e-Beam resist

high resolution, process stable, hydrogen silsesquioxane negative resist

SX AR-N 8400 series (Medusa 84 SiH) HSQ e-Beam resist

high resolution, process stable, hydrogen silsesquioxane negative resist

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Product brief 產品簡介

SX AR-N 8400系列, 實驗代號Medusa 84 SiH, 為氫倍半矽氧烷類(HSQ – Hydrogen silsesquioxane)負型電子束微影阻劑。

與傳統HSQ相較，Medusa 84 SiH產品穩定性佳，有效期限較長，較低曝光劑量與寫入時間，製程穩定等優點。產品系列目前有:
SX AR-N 8400.04
SX AR-N 8400.08
SX AR-N 8400.12
SX AR-N 8400.22

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Product series & code 產品比較及編碼說明：

Product Basic 基本資料

Medusa 84 SiH

SX AR-N ^*3

8400.04^*

8400.08^*

8400.12^*

8400.22^*

SX AR-N^*3

8400.04

8400.08

8400.12

8400.22

Solid content 固型份 ％

4 %

8 %

12 %

22 %

Solid content 固型份 %

FT@4000rpm 厚度

50 nm

100 nm

200 nm

400 nm

Film thickness@4000rpm 厚度 nm

100

200

400

Flash point 閃火點 ℃

< 35 ℃

Flash point 閃火點 ℃

< 35

Storage 6 months^*1

8 – 12 ℃^c

from minus 18 ℃^c

Storage 6 months^*1 儲存溫度 ℃

8 – 12

from minus 18

Production status^*1

routine^e

Production status^*1 生產狀況

routine

Product is guaranteed３months shelf life from the date of sale if stored correctly.

在正確儲存條件下，產品保證的有效期限為銷售日起３個月。

Product can also be used without guaranteed until the date indicated on the label.

在無提供保證的情況下，產品可使用至標籤上所示的有效期。

Production status：

routine：產品固定排程生產，交貨期約２－４週。

on-demand：產品無固定排程生產，需先詢價。可能有最小訂購量(MOQ)或需待批次生產排程。

Product code 產品編碼說明：

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Packing 產品包裝:

✅ 100 ml /瓶
✅ 250 ml /瓶
✅ 1 L /瓶
其它包裝可依客戶需求增加.

✏️ 價格詢問

✏️ 其它諮詢

Shipping 出貨:

✅ 2 – 4 週：徳國運出
❎ 1 週：國內庫存
(目前暫無國內庫存)

📤 產品GHS標識

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Product Features 產品特性

Hydrogen silsesquioxane dissolved in butyl acetate
主要成份為氫基倍半矽氧烷溶於醋酸正丁酯
High resolution e-beam resist
高解析度電子束微影阻劑
Improved shelf life, as butyl acetate reduces gelling and particle formation
使用醋酸正丁酯為溶劑以減少結塊及顆粒的形成，有效的改善有效期限
Improved stability due to the addition of stabilizer molecules
添加穩定劑使產品更形穩定
Elimination of the presumably carcinogenic solvent MIBK (methyl isobutyl ketone)
不使用可能致癌的甲基異丁酮(MIBK)溶劑

Important information 提醒事項

Medusa 84 SiH must not be transferred to glass containers or filtered using a glass prefilter, as this will cause it to gel irreversibly.
產品接觸玻璃材質會產生不可逆凝結現像，請勿分裝於玻璃製容器，或使用玻璃製管道及過濾器。
The Medusa 84 SiH must reach room temperature before opening the bottle. Condensing water can affect the shelf life, as the resist is sensitive to moisture.
濕氣（水份）會降低有效期限。開瓶使用前需完全回溫至室溫。

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Product Properties 產品物性

Properties I 物性表

Properties I 物性表

SX AR-N

Medusa 84 SiH

unit

8400.04

8400.08

8400.12

8400.22

Solid content 固型份 ％

Film thickness@4000rpm

100

200

400

Flash point 閃火點

℃

< 35 ℃

Storage temperature 儲存溫度

℃

8 – 12

-18 (minus 18)

Quaranty Shelf after shipment

month

Properties II

Glass transition temperature

℃

– –

Dielectric constant 介電常數

℃

3.0

Cauchy coefficients₀

N₀

1.409₀

₀

N₁

46₀

₀

N₂

0₀

Plasma etching rate (nm/min)

1 Pa pressure/500W ICP power

-100 V bias substrate electrode

50 sccm of the respective gas

42 sccm CF4 / 25 sccm for CF4 + O2)

20 °C wafer temperature

SF6

146

CF4

175

CF4 + O2

5.5

Cl2

Properties I SX AR-N

8400.04

8400.08

8400.12

8400.22

Solid content (%)

Film thickness@4000rpm (nm)

100

200

400

Flash point (℃)

< 35

Storage temperature (℃)

8 – 12

From minus 18

Properties II

Glass transition temp. (℃)

– –

Dielectric constant

3.0

Cauchy coefficients

N0	*1.049*
N1	46
N2	0

Plasma etching rates (nm/min)*

Ar	34
*SF6*	*146*
*CF4*	*175*
*CF4+O2*	82
O2	*5.5*
*Cl2*	64

*Reactor conditions
1 Pa reactor pressure
500 W ICP power
-100 V bias substrate electrode
50 sccm of the respective process gas
(42 sccm for CF4 / 25 sccm each for CF4 + O2)
20 °C wafer temperature

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Spin curve 塗佈曲線

● SX AR-N 8400.04
● SX AR-N 8400.08
● SX AR-N 8400.12
● SX AR-N 8400.22

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Structure resolution

6 nm lines developed with 1% KOH. The wafer was stored in vacuum for10 days between coating and lithography and showed no loss of processability or degradation.© Raith Dortmund

Process chemicals

Substrate

Soft bake

Exposure

Development

Substrate

Soft bake

Exposure

Development

4″ Si wafer

90℃ x 1 min, hot plate

Raith Pinoneer 30kV

AR 300-73, 60-90s, 23℃

4″ Si wafer

90℃ x 1 min, hot plate

Raith Pinoneer 30kV

AR 300-73, 60-90s, 23℃

Structure resolution

6 nm lines developed with 1% KOH. The wafer was stored in vacuum for10 days between coating and lithography and showed no loss of processability or degradation.© Raith Dortmund

Process parameters

Adhesion promoter

Developer

Exposure

Development

Adhesion promoter

Developer

Exposure

Development

AR 300-80 new

AR 300-44 / AR 300-73

Butylacetate VLSI

DI-H2O / BOE, 1% HF

AR 300-80 new

AR 300-44/AR 300-73

Butylacetate VLSI

DI-H2O / BOE, 1% HF

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Process baseline 製程參數

This diagram shows exemplary process steps for SX AR-N 8400 series resists. All specifications are guideline values

which have to be adapted to own specific conditions. For further information on processing, 👉“Detailed instructions for optimum processing of e-beam resists”. For recommendations on waste water treatment and general safety instructions,
👉”General product information on Allresist e-beam resists”.
表列為SX AR-N 8400系列產品製程參數的範例. 所有參數為參考值,使用者應依設備環境實際狀況加以調整

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Note on stability 穩定性說明

Coated substrates can be stored under normal conditions and processed without loss of sensitivity or resolution even after several days. The use of vacuum or inert gas is not necessary.
已塗佈阻劑之基板在正常情況下仍可維持其敏感度或解析度至數日。(無需置於真空或鈍氣環境）。

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Contrast curve

Contrast curves of Medusa 84 SiH with a dwell time of 3 days between irradiation and development. Developing with a higher TMAH concentration leads to improved contrast with only a slightly higher dose.

Medusa 84 SiH曝光後靜置3天再進行顯影，以較高濃度TMAH顯影劑僅需些微調整曝光劑量。

Grey tone application

Grey scale structures written on silicon with 30 kV. The top rowshows the squares with the dose used in μC/cm². The stylus profilometer shows the remaining height in Å after development with 2.38 % TMAH. © Zsuzsanna Márton, ELI ALPS Hungary

於Si基板上以30kV與2.38% TMAH寫出的灰階結構。下圖上方顯示正方型結構與對應的曝光劑量。圖下方顯示其對應的殘餘厚度。

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Structures with a high aspect ratio 高深寬比結構範例

Wall-structures written on GaAs with 600 µC/cm² @100 kV, 200 pA, developed with AR 300-73 (6.5% TMAH) for 60 s, PAB & PEB: 5 min@100 °C hotplate. © Yurii Kutovyi, FZ Jülich

Nanorod written on silicon with 2000 µC/cm² @50kV and developed with AR 300-44 (2.38%TMAH). Aspect ratio of up to 10 was achieved. R. Stöhr, ZAQuant University of Stuttgart

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Medusa 84 SiH on quartz with AR-PC 5094.02 導電塗層搭配HSQ範例

Siemens star written on quartz with the new conductive coating Electra 92 (AR-PC 5094.02) spun on to prevent charge build-up. This variant of Electra 92, specially developed for HSQ, has excellent coating and adhesion properties. © B. Drent, AMOLF NanoLab Amsterdam

Electra 92 (AR-PC 5094.02)為新版導電塗層，對HSQ有良好塗佈特性及黏著度。
下圖為Medusa 84 SiH搭配新版Electra 92於石英基板寫出西門子星標的範例。

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Process stability and storage under nitrogen atmosphere

製程與儲存穩定性

The HSQ polymer, developed by Allresist, has a unique manufacturing and purifi cation process. This results in the Medusa 84 SiH product being optimised in terms of its properties, such as minimum feature size, line edge roughness and process stability. This was confi rmed in a study conducted by RAITH GmbH with their Voyager EBL-System at 50kV, 120 pA, base dose: 12.000 pC/cm, developer: KOH 1% 1 min. The Medusa 84 SiH was compared with an HSQ powder, and the smallest possible line width was determined.

ALLRESIST以獨特的合成及純化技術生產HSQ，以此高分子為基礎，阻劑產品Medusa 84 SiH擁有最小開口解析度，LER及製程穩定。在Rath Voyager電子束微影設備以50kV，120pA，劑量12,000pC/cm為曝光參數：KOH 1%顯影1分鐘後可得到最小的線寬。與傳統HSQ粉末配製的阻劑比較，最小線寬及穩定度表現相對優良。(左下圖)。不同儲存溫度在3.5個月後對線寬表現僅有些微差異。(右下圖)

The highest achievable resolution of the Medusa 84 SiH is 3.6 nm on a freshly coated wafer (day 0), whereas the HSQ powder achieved significantly poorer values of 5.3 nm. Medusa 84 SiH also demonstrates a more consistent increase in achievable line width, with minimal change to 3.8 nm after 14 days. In contrast, the HSQ powder exhibited greater fluctuations throughout the entire observation period.

After 3.5 months, the effects of storing the Medusa 84 SiH resist solution at different temperatures (-30°C, 0°C and 23°C) showed only minor fluctuations. No degradation was observed despite storage temperatures exceeding the recommended range of 8-12 °C.

Double-coating for extended layer thickness range

厚膜製程－兩次塗佈

Medusa 84 SiH allows for layer thicknesses of up to 1400 nm with double coating. This expands the range of applications for the thickest variant, SX AR-N 8400.22, which achieves a thickness of only 800 nm in a single coating at 1000 rpm. This improvement is achieved through the use of butyl acetate as a solvent instead of MIBK, as well as the high purity of the HSQ polymer in the solution.

1400nm高厚度可以兩次塗佈方式達到。AR-N 8400.22以1000轉單次塗佈可達厚度為800nm，這是因爲高純度的HSQ合成及以醋酸正丁酯取代MIBK為溶劑的成果。

The double coating process was demonstrated at FZ Jülich and requires precise control of the process flow. The final patterned structures of the double coating process are shown in the picture below. The process begins with a spin-coating step at 2,000 rpm using the SX AR-N 8400.22, followed by a 5-minute bake at 210 °C on a hotplate. It is critical that the wafer is allowed to cool for five minutes before the second spin-coating is applied. A second post-application bake is then carried out for 5 minutes at 130 °C (hotplate). Electron-beam exposure is then carried out at 100 kV with a beam current of 200 pA and a dose of 600 µC/cm². No post-exposure bake is required. Development is performed in AR 300-73 (6.5% TMAH) for seven minutes, followed by rinsing with deionized water and blow-dry.

德國的Jülich 研究中心展示了雙層塗佈高厚度的製程能力。（下圖）

阻劑：AR-N8400.22
1^st塗佈： 2,000 rpm
軟考：210℃ /5分鐘 hot plate
冷卻：5分鐘（重要步驟）
2^nd塗佈：（依需要厚度調整轉速）
軟烤：130℃/5分鐘，hot plate
曝光：100kV, 200pA, 600uC/cm²
PEB：無
顯影：AR 300-73 (TMAH 6.5%)/7分鐘
Rinse：DI water & air dry

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Process	AR-N 8400.08
Coating	100 nm@4000 rpm x 60 min
Soft bake (± 1℃)	90 ℃ x 1 min hot plate, or 90 ℃ x 5 min convection oven
Conductive coating	AR-PC 5094.02 40nm@4000rpm x 30sec for insulating substrate (quartz, glass, GaAs)
2^nd soft bake	90 ℃ x 2 min hot plate
eBeam exposure	D₀ : 250uC/cm² (30 kV Raith Pioneer)
Removing	AR-PC 5094.02 conductive layer remove DI-H₂O 60 sec
Development (puddle) 21-23 ℃ ± 0.5℃	AR 300-44 developer for SX AR-N 8400.08 AR 300-73 for optimized contrast Rinse: DI-H2O 30 sec
Hard bake (optional)	250℃ x 30 min hot plate, or 250℃ x 30 convection oven for improve plasma etching resistance
User’s specific process	deposition, etching …
Removing	BOE 5:1 or 1% HF