SX AR-N 8250 series

SX AR-N 8250 series (Medusa 82) e-beam lithography resist

HSQ-like, with sensitivity in a factor of 20, higher shelf life and easier to remove

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Product brief 產品簡介

AR-N 8250系列, 實驗代號Medusa 82 UV, 為矽倍半氧烷類(silsesquioxane)負型電子束微影阻劑. 可於電子束(EBL), 極紫外線(EUV)及深紫外線(DUV)下曝光. 與傳統HSQ resist相較, Medusa 82具有較佳製程穩定度, 較容易去除及較長的使用壽命等優點.

產品系列目前有:
SX AR-N 8250.03
SX AR-N 8250.06
SX AR-N 8250.18

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Product series & Code 產品比較及編碼說明：

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Packing 產品包裝:

✅ 100 ml /瓶
✅ 250 ml /瓶
✅ 1 L /瓶
其它包裝可依客戶需求增加.

✏️ 價格詢問

✏️ 其它諮詢

Shipping 出貨:

✅ 2 – 4 週：徳國運出
❎ 1 週：國內庫存
(目前暫無國內庫存)

📤 產品GHS標識

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Product Features 產品特性

high-resolution e-beam resist, also sensitive in EUV (13.5 nm) and DUV (250 nm) range
高解析度電子束微影阻劑,亦可於極紫外線(EUV 13.5 nm),深紫外線(DUV 250 nm)下曝光
comparable to HSQ, but with by a factor of 20 higher sensitivity, easier to remove
類似於HSQ,但敏感度高約20倍,也較容易去除

considerably higher shelf life
較長的有效期限
silsesquioxane and acid generator dissolved in 1-methoxy-2-propanol
主要成份為矽倍半氧烷及光酸產生劑溶於丙二醇甲醚(PGME)

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Product Properties 產品物性

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Spin curve 塗佈曲線

● SX AR-N 8200.03
● SX AR-N 8200.03
● SX AR-N 8200.03

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Structure resolution

200 nm bars, written at 100 kV with SX AR-N 8200.03/1

Resist structures

Medusa 82 UV structure with higher sensitivity

Process parameters

Substrate	4″ Si wafer
Soft bake	150℃x10min, hot plate
Exposure	Raith Pioneer 30 KV
Development	AR 300-44, 90sec 23℃

Process chemicals

developer	AR 300-44
Thinner	AR 600-07
Stopper	DI water
Remover	2n NaOH, BOE

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Process baseline 製程參數

This diagram shows exemplary process steps for SX AR-N 8250 series resists. All specifications are guideline values which have to be adapted to own specific conditions. For further information on processing, 👉“Detailed instructions for optimum processing of e-beam resists”. For recommendations on waste water treatment and general safety instructions,
👉”General product information on Allresist e-beam resists”.
表列為SX AR-N 8250系列產品製程參數的範例. 所有參數為參考值,使用者應依設備環境實際狀況加以調整

Process	SX AR-N 8250.03	SX AR-N 8250.06	SX AR-N 8250.18
Coating	50 nm @4000 rpm	100 nm @4000 rpm	400 nm @4000 rpm
soft-bake (±1℃)	150 ℃ x 10 min/hot plate
e-Beam exposure dose (E₀)	Raith Pioneer, acceleration voltage 30 kV E₀: dose
60 uC/cm²	60 uC/cm²	85 uC/cm²
Hard bake (optional)	Hardbake can be omitted since no further sensitivity increase is achieved.
Development 21-23℃ puddle	AR 300-44 90 sec
Rinse	DI water, 30 sec
Customer specific process
Removal	2 n NaOH

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Note on stability 穩定性說明

Liquid Medusa resists are stable for up to 6 months if kept refrigerated at least 8 – 12 °C. Coated substrates can be stored under normal conditions and processed without any loss of sensitivity or resolution even after several weeks. Current studies show that irradiated substrates can be processed even after 21 days without significant loss of sensitivity.
Medusa 82阻劑保存在8-12℃環境下,有效期限為6個月. 阻劑已塗佈在基板上,在正常情況下仍可維持其敏感度或解析度至數週. 目前研究顯示,已曝光的基板在21天後顯影,其敏感度幾乎不變.

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Process instruction 製程參數

Medusa 82 and Medusa 82 UV can both be processed under similar conditions (annealing, development, removal), but they differ with respect to their sensitivity. Resist Medusa 82 UV contains a photoacid generator to increase the sensitivity and is already 20 times more sensitive if normal process conditions (without post exposure bake) are used. This is especially important für sensitive substrates which might be damaged by an additional heat treatment. Fig. 4 shows a comparison of both resists at different acceleration voltages without post exposure bake:
Medusa 82與Medusa 82 UV製程參數類似,如烘烤,顯影,去除等. 差異主要在於敏感度. Medusa 82 UV的配方含光酸產生劑,在無曝後烤的ㄧ般製程,其敏感度已高出20倍. 這個特性對溫度敏感的基板非常重要,可避免因曝後烤的高溫造成異常. 下圖4為兩種阻劑在無曝後烤及不同加速電壓的比較. Medusa 82為藍色,Medusa 82 UV為橘色. 左下圖加速電壓為30kV;右下圖為100kV.

Figure 4: Comparison of the sensitivity of SX AR-N 8200.06/1 (blue) and SX AR-N 8250.06/2 (orange); on the left side at 30 kV, on the right at 100 kV acceleration voltage. Development was performed in AR 300-44, 90 s, 23 °C and without post exposure bake

Figure 5: Combination of post exposure bake and photoacid addition

For Medusa 82 UV, an additional tempering step after exposure does not result in a further increase in sensitivity:
增加曝後烤不會提高Medusa 82 UV的敏感度, 如下圖5

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