分類: EBL resist

The post discusses the importance of high-resolution negative e-beam resists, particularly focusing … read 閱讀全文

Medusa 82’s sensitivity can be increased by adding photoacid generators (PAGs) or employing a post-e… read 閱讀全文

The Medusa 82 negative resist offers high resolution and plasma etching stability in oxygen, compara… read 閱讀全文

Medusa 82, a standard resist, can have its sensitivity increased by the addition of a photoacid gene… read 閱讀全文

EUV-lithography (EUVL) uses extreme ultraviolet radiation for semiconductor industry, enabling small… read 閱讀全文

A new high-resolution negative e-beam resist, AR-N 7520.17new, has been successfully used at FEMTO-S… read 閱讀全文

A high-resolution negative e-beam resist with a sensitivity of about 30 nm resolution is urgently re… read 閱讀全文

The e-beam resist AR-N 7720, developed by Allresist, allows for the production of diffractive optics… read 閱讀全文

The SX AR-N 7730/37 is a chemically amplified, highly sensitive negative e-beam resist with improved… read 閱讀全文