High-resolution negative e-beam resist AR-N 7520.17new for etching application

At the institute FEMTO-ST in France, very even and smooth 300nm ridges could be achieved with AR- 7520.17new and a coating thickness of 400nm . In the following etching application, the resist geometry could be transferred into the Si substrate in excellent quality. Due to the good etch resistance in the plasma used (ICP, SF6:C4F8), a selectivity of 12:1 could be achieved.

AR-N 7520.17, parallel 300 nm lines,  film thickness 400nm, SB 1′ @ 85°C, Raith eLine, 30 kV, dosage 120 µC/cm², devlopment 2′ AR 300-44 (0.26n TMAH), cleaning with oxygen plasma

ICP etched architecture, mixture SF6:C4F8 / 400 W / Selectivity 12:1, stripping  with oxygen plasma