標籤: positive-EBL resist

Use of CSAR 62 for the manufacture of nanostructures on read 閱讀全文

Evaluation of various developers for e-beam exposed CSA read 閱讀全文

Highly sensitive e-beam resist AR-P 617 (PMMA-copolymer read 閱讀全文

CSAR 62 for EUV applications In addition to the use in read 閱讀全文

HF etching of GaAs with CSAR 62 masks Mr. Y. Nori from read 閱讀全文

BOE etching of SiO2 with CSAR 62 mask Many applications read 閱讀全文

Manufacture of plasmonic nanostructures with CSAR 62 Bj read 閱讀全文

CSAR 62 – Experimental studies on new, sensitive develo read 閱讀全文

CSAR 62 – Development at low temperatures The sensitivi read 閱讀全文

CSAR structures on glass The use of a combination of CS read 閱讀全文