標籤: positive-EBL resist

Use of CSAR 62 for the manufacture of nanostructures on GaAs substrates CSAR 62 is routinely used to read 閱讀全文

Evaluation of various developers for e-beam exposed CSAR 62 layers (100 kV) To evaluate the suitabil… read 閱讀全文

Highly sensitive e-beam resist AR-P 617 (PMMA-copolymer) The copolymer composed of methyl methacryla… read 閱讀全文

CSAR 62 for EUV applications In addition to the use in e-beam lithography, the highly sensitive e-be… read 閱讀全文

HF etching of GaAs with CSAR 62 masks Mr. Y. Nori from Lancaster University (Department of Physics, … read 閱讀全文

BOE etching of SiO2 with CSAR 62 mask Many applications involve an etching step to transfer the stru… read 閱讀全文

Manufacture of plasmonic nanostructures with CSAR 62 Bjarke Rolighed Jeppesen (Department of Physics read 閱讀全文

CSAR 62 – Experimental studies on new, sensitive developers CSAR 62 layers can also be patterned by … read 閱讀全文

CSAR 62 – Development at low temperatures The sensitivity of CSAR 62 is strongly influenced by the c… read 閱讀全文

CSAR structures on glass The use of a combination of CSAR 62 and the conductive coating Electra 92 i… read 閱讀全文