標籤: positive-EBL resist

The AR-P 617 two layer lift-off system involves using a resist called AR-P 617 to create a well-defi… read 閱讀全文

T-gates with three-layer system Publication MNE 2017 T-gate structures are often required for the fa… read 閱讀全文

3-layer system CSAR/PMMA-co-MA/PMMA A further variant for the structure of three-layer systems uses … read 閱讀全文

CSAR 62 – Mechanism of action By comparison with PMMA resists, CSAR 62 is characteriz… read 閱讀全文

PMMA e-beam resist, positive and negative in the case of overexposure, suitable for bridge structure… read 閱讀全文

PMMA e-beam resist with flat gradation for three-dimensional structures It is advantageous for the f… read 閱讀全文

Temperature resistance of e-beam polymers Layers and structures of e-beam polymers possess different read 閱讀全文

CSAR 62 nanostructures written at 100 kV Applying an acceleration voltage of 100 kV has the advantag… read 閱讀全文

CSAR 62 single layer lift-off system With our new development e-beam resist AR-P 6200 (CSAR 62), ver… read 閱讀全文

CSAR 62 for thick films Intensive plasma etching applications for the manufacture of deep etching st… read 閱讀全文