標籤: general-EBL resist

The content discusses the calculation of minimum exposure time for a specific area at a given dose. … read 閱讀全文

Electron-beam lithography (EBL) offers unlimited resolution due to the small wavelength of 25keV ele… read 閱讀全文

When a high-energy electron beam is directed onto a resist layer, it causes both forward and backwar… read 閱讀全文

SCALPEL, or Scattering with Angular Limitation Projection Electron-beam Lithography, is a mask-based… read 閱讀全文

The content discusses the raster and vector scan principles in electron beam lithography. Raster sca… read 閱讀全文

The proximity effect in electron beam lithography occurs when high-energy electrons are stopped or m… read 閱讀全文

The high-energy electrons impacting insulating substrates cause the substrate to charge negatively, … read 閱讀全文

When primary electrons collide with other electrons or atoms, they can undergo inelastic scattering,… read 閱讀全文

Electron beam lithography (EBL) systems consist of components such as the electron source, electro-o… read 閱讀全文

Electron beam lithography (EBL) systems are composed of essential components such as the electron so… read 閱讀全文