SX AR-P 3500/8 product brief 產品說明
SX AR-P 3500/8產品為耐高溫正型光阻,耐溫可達300℃,適合各類高溫製程。
目前產品屬實驗型及可客製化調整，購買前需先詢問：

Packing & shipping 產品包裝與出貨

Product features 產品特性

• broadband UV, i-line, g-line
  曝光波長： 寬頻紫外線, i-line (365nm) , g-line (436nm)
• high plasma resistant, thermal stable up to 300 °C
  耐電漿,耐溫可達300℃
• suitable for high-temperature 2-layer lift-off processes as well as plasma etching and implantation processes
  適合高溫製程,例如: 雙層懸浮剝離,電漿蝕刻, 離子植入等
• combination of poly(hydroxystyrene-co-MMA) and naphthoquinone diazide
  主要成份為高分子共聚物(羥基苯乙烯-co-甲基丙烯酸甲酯)及叠氮基萘醌
• safer solvent PGMEA
  使用較安全溶劑丙二醇甲醚醋酸酯
  

Product properties 產品物性

SX AR-P 3500/8 Spin curve 塗佈曲線

Process baseline 製程參數

This diagram shows exemplary process steps for SX AR-P 3500/8 series resists. All specifications are guideline values which must be adapted to own specific conditions. For further information on processing, 👉“ Detailed instructions for optimum processing of photoresists”. For recommendations on wastewater treatment and general safety instructions, 👉”General product information on Allresist photoresists”.
表列為SX AR-P 3500/8系列產品製程參數的範例。所有參數為參考值,使用者應依設備環境實際狀況加以調整。

Development recipe