SX AR-N 4340/7

SX AR-N 4340/7 thermal stable negative photoresist

For one and two-layer system, thermal stable up to 300℃

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SX AR-N 4340/7 product brief 產品說明
SX AR-N 4340/7 為耐高溫,化學增幅負型光阻,具高敏感度,sub-um解析度。耐溫可達300℃。
下切型結構(lift-off應用)可經由曝光顯影參數調整或與AR-BR 5400 bottom resist搭配為雙層製程。(2-layer system)。
產品基本資料如下：

		SX AR-N 4340/7
Film thickness@4000rpm	um	1.4
Resolution	um	0.7
contrast		5.0
Flash point	℃	44
Storage 6 months¹	℃	10 – 18
Production status²		on-demand

1. Storage 6 months

Shelf life is guaranteed for 6 months from the date of sales if stored at above mentioned condition.

2. Production status:

routine – 固定排程生產，交貨期約2 – 4週。

on-demand – 無固定排程生產，需先詢問。可能有最小訂購量或需待批次生產。

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Packing & shipping 產品包裝與出貨

packing 產品包裝

✅ 250 ml/瓶

✅ 1 L/瓶

其它包裝可依需求研擬增加

✏️ 價格詢問

✏️ 其它諮詢

shipping 產品出貨

✅ 2 – 4 週。德國運出。

❎ 1 週。國內庫存。

（本產品暫無國內庫存）

📎 SX AR-N 4340/7 GHS 標識

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Product features 產品特性

i-line, g-line, deep UV (248 – 266 nm)
曝光波長： i-line (365nm) , g-line (436nm), deep UV (248 – 266 nm)
highest sensitivity, high resolution
高敏感度,高解析度
good adhesion, high contrast, chemically enhanced
化學增幅型,具高對比,與基板黏著度良好
undercut profiles (lift-off) are possible
可調整成下切型圖案，用於懸浮剝離製程
may be used with AR-BR 5400 as 2-layer system
與AR-BR 5400搭配為雙層阻劑，用於懸浮剝離(lift-off)製程
plasma etching resistant, thermostable up to 300℃
耐各類電漿蝕刻，耐溫可達攝氏300度
polyhydroxystyrene polymer with photochemical acid generator and aminic cross-linker
成份含聚羥基苯乙烯高分子，光酸與架橋劑
safer solvent PGMEA
使用較安全溶劑丙二醇甲醚醋酸酯

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Product properties 產品物性

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SX AR-N 4340/7 Spin curve 塗佈曲線

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Structure and resolution 結構與解析度

Structure resolution

SX AR-N 4340/7
0.7 um resolution at film thickness of 1.4 um

Resist structure

Resist structure of SX AR-N 4340/7 after baking at 300℃

Process parameters

Substrate	Si 4″ wafer
Soft bake	90℃ x 60sec, hot plate
Exposure	i-line stepper (NA: 0.65)
Development	AR 300-47x60 sec, 22℃

Process chemicals

Adhesion promoter	AR 300-80 new
Developer	AR 300-47
Thinner	AR 300-12
Remover	AR 600-71

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Process baseline 製程參數

This diagram shows exemplary process steps for SX AR-N 4340/7 photoresists. All specifications are guideline values which must be adapted to own specific conditions. For further information on processing, 👉“ Detailed instructions for optimum processing of photoresists”. For recommendations on wastewater treatment and general safety instructions, 👉”General product information on Allresist photoresists”.
表列為SX AR-N 4340/7 系列產品製程參數的範例。所有參數為參考值,使用者應依設備環境實際狀況加以調整。

Processing instructions for the generation of lift-off structures and supplementary information

An undercut of the resist structure (lift-off) can be obtained with a prolonged development after minimum exposure. The undercut and structures with vertical side walls remain even at high temperatures of up to 300 °C. This high temperature stability is also used in the two-layer system with AR-BR 5400 and allows intensive sputtering processes at very high temperatures (see product information AR-BN 5400).
This resist formulation is currently successfully processed by customers, may however also be modified according to new customer’s requirements.

懸浮剝離製程,光阻下切結構的形成,需降低曝光劑量並增加顯影時間. 此種下切型結構可耐溫達300℃.與底層阻劑搭配使用,以雙層阻劑型成的深下切結構, 適合於高溫濺鍍製程.
本產品配方已於客戶製程成功應用. 如果有新製程應用可調整配方以達到需求.

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