AR-P 5300 series product brief 產品說明
AR-P 5300系列產品為高敏感度正型光阻，適合電極等金屬蒸鍍懸浮剝離(lift-off)製程。
目前產品依配方與厚度範圍有如下序號：

Packing & shipping 產品包裝與出貨

Product features 產品特性

• broadband UV, i-line, g-line
  曝光波長： 寬頻紫外線, i-line (365nm) , g-line (436nm)
• high photosensitivity, high resolution
  高敏感度,高解析度
• good adhesion properties
  與基板介面接著度良好
• undercut structures for vapor deposition application, in particular of metal using lift-off techniques e.g., conductor paths
  下切結構適合金屬電極等蒸鍍及浮剝離技術
• plasma etching resistant, temperature-stable up to 120 °C
  耐電漿蝕刻,耐溫可達120℃
• combination of novolac and naphthoquinone diazide
  主要成份為酚醛樹酯及叠氮基萘醌
• safer solvent PGMEA
  使用較安全溶劑丙二醇甲醚醋酸酯
  

Product properties 產品物性

AR-P 5300 series Spin curve 塗佈曲線

Process baseline 製程參數

This diagram shows exemplary process steps for AR-P 5300 series resists. All specifications are guideline values which must be adapted to own specific conditions. For further information on processing, 👉“ Detailed instructions for optimum processing of photoresists”. For recommendations on wastewater treatment and general safety instructions, 👉”General product information on Allresist photoresists”.
表列為AR-P 5300系列產品製程參數的範例。所有參數為參考值,使用者應依設備環境實際狀況加以調整。

Process instructions

Tempering 軟烤

Higher tempering temperatures are required to produce the undercut
形成下切式結構需較高的軟烤溫度

Development 顯影

The undercut of resist structures is generated during aqueous-alkaline development
下切式結構是在鹼性水溶液顯影程序下形成

Development recipe