AR-P 3500 series product brief 產品說明
AR-P 3500 系列產品為標準正型光阻,敏感度高，製程穩定,適合各類半導體製程。
目前產品依配方與厚度範圍有如下序號：

Packing & shipping 產品包裝與出貨

Product features 產品特性

• broadband UV, i-line, g-line
  曝光波長： 寬頻紫外線, i-line (365nm) , g-line (436nm)
• high photosensitivity, high resolution
  高敏感度,高解析度
• very good adhesion properties
  與基板介面接著度良好
• 3500 T: robust processing, suitable for TMAH developer 0.26 n
  AR-P 3510T/3540T製程穩定,適合四甲基氫氧化銨(TMAH 0.26n)顯影
• plasma etching resistant, temperature-stable up to 120 °C
  耐電漿蝕刻,耐溫可達120℃
• combination of novolac and naphthoquinone diazide
  主要成份為酚醛樹酯及叠氮基萘醌
• safer solvent PGMEA
  使用較安全溶劑丙二醇甲醚醋酸酯
  

Product properties 產品物性

AR-P 3500 series Spin curve 塗佈曲線

Process baseline 製程參數

This diagram shows exemplary process steps for AR-P 3500 series resists. All specifications are guideline values which must be adapted to own specific conditions. For further information on processing, 👉“ Detailed instructions for optimum processing of photoresists”. For recommendations on wastewater treatment and general safety instructions, 👉”General product information on Allresist photoresists”.
表列為AR-P 3500系列產品製程參數的範例。所有參數為參考值,使用者應依設備環境實際狀況加以調整。

Development recipe

Focus width AR-P 3540 T g-line stepper

Ridge	DOF@230mJ	Dose range
1.5 um	> 2.0 um	110 – 260 mJ/cm2
1.0 um	> 1.5 um	130 – 260 mJ/cm2
0.7 um	> 1.25 um	160 – 250 mJ/cm2
0.5 um	> 1.0 um	190 – 240 mJ/cm2

Resist structures

AR-P 3500
Film thickness 2 µm Resist structures 5 µm

Reference data 參考資料

Focus width
Film thickness 1.5 µm on Si-wafer, dose: 230 mJ/cm²

Focus	1.5 um L/S	1.0 um L/S	0.7 um L/S	0.5 um L/S
– 1.0
– 0.75
– 0.5
– 0.25
0.0
+ 0.25
+ 0.5
+ 0.75

Linearity

Film thickness 1.5 µm on Si-wafer, focus: 0.0

Dose	1.5 um L/S	1.0 um L/S	0.7 um L/S	0.5 um L/S
160 mJ
190 mJ
210 mJ
230 mJ

Dark field erosion

Film thickness 1.5 µm on Si-wafer, focus: 0.0

Dose	1.5 um L/S	1.0 um L/S	0.7 um L/S	0.5 um L/S
190 mJ
210 mJ
230 mJ