AR-N 4600 series product brief 產品說明
AR-N 4600系列，實驗代號Atlas 46，為高膜厚產品,適合於電鍍,微系統,微機電等各類應用。

產品編號: AR-N 4610 (S) – stable layer. 可做為結構的一部份。
AR-N 4650 (R) – removable layer. 適合於各類金屬電鍍製程。
產品基本資料如下：

Packing & shipping 產品包裝與出貨

Product features 產品特性

• i-line, broadband UV
  曝光波長: 寬頻紫外線, i-line (365nm)
• very good adhesion properties
  黏著度良好
• very high sensitivity
  光阻具高敏感度
• 4600-10 for stable layers of 5 μm – 15 μm
  AR-N 4600-10應用於 厚度 5 um – 15 um的永久材
• 4650-10 for removable layers of 5 μm – 15 μm
  AR-N 4650-10應用於厚度 5 um -15 um的可去除光阻
• further film thicknesses up to about 200 μm available on request
  厚度可依需求調整,最高可達200 um。 如有需要請連絡
• poly[(o-cresyl glycidyl ether)-co-formaldehyde] and acid generator
  成份含PCGF-聚[(鄰甲苯基縮水甘油醚)－共甲醛]與光酸
• safer solvent PGMEA
  使用較安全溶劑丙二醇甲醚醋酸酯
  

Product properties 產品物性

AR-N 4600 series Spin curve 塗佈曲線

Process baseline 製程參數

This diagram shows exemplary process steps for AR-N 4600 series photoresists. All specifications are guideline values which must be adapted to own specific conditions. For further information on processing, 👉“ Detailed instructions for optimum processing of photoresists”. For recommendations on wastewater treatment and general safety instructions, 👉”General product information on Allresist photoresists”.
表列為AR-N 4600 系列產品製程參數的範例。所有參數為參考值,使用者應依設備環境實際狀況加以調整。

Development recipe

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Reference data for process tuning

UV/VIS NIR

UV/VIS spectra of 10 μm layers Atlas S and Atlas R in comparison to SU-8

UV/VIS NIR

UV/VIS spectra of Atlas 46. Yellowing caused by varying the dura- tion of broadband UV exposure after curing.

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Imprinting

Combined nano- and microstructures, produced by imprinting of AR-N 4600 (© Uni Wuppertal)

Imprinting

Close-up view of AR-N 4600 (© Uni Wuppertal)

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DSC

DSC of Atlas S (AR-N 4600-10)

DSC

DSC of Atlas R (AR-N 4650-10)

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Bridge application

Bridge structure of two-layer system with
AR-N 4600-10 (bottom) and SX AR-N 4620-10/1 (top)

Bridge application

Process description of “bridge construction” with AR-N 4600-10 (bottom, BB-UV) and SX AR-N 4620-10/1 (top, g-line)

Addtional information for process

Layer thickness values of Atlas R and Atlas S are pre- adjusted to 10 μm at a spin speed of 1000 rpm. It is re- commended to perform the subsequent tempering step on the hotplate at 95 °C for 5 min. Temperature ramps or stepwise drying, e.g. 65 °C for 2 minutes, followed by 95 °C for 4 minutes, can improve the resolution.
Both resists can be structured by i-line or broadband UV exposure. Prior to irradiation, substrates should be cooled to room temperature. It is recommended to per- form the following tempering step for cross-linking on the hotplate at 105 °C for 2 min.
Ramps or stepwise cross-linking procedures like e.g. 65 °C for 2 minutes, followed by 95 °C for 7 minutes and 105 °C for 2 minutes, can improve the resolution. In general, the stability of resists increases with higher tem- peratures and longer bake times, but this requires on the other side longer development times. The use of tem- perature ramps is also recommended for cooling since cooling too fast may result in stress cracking.

Atlas R及Atlas S的厚度是事先調整為轉速1000 rpm時為10um。 接著建議以熱板加熱95℃x5min。 階梯式升溫可改善解析度，例如: 65℃ x 2 min， 再以95℃ x 4 min。
Atlas R及Atlas S曝光波長為寬頻紫外線(broadband UV)或365nm (i-line)。 曝光前，晶片應先冷卻至室溫。 曝後烤建議溫度時間為：105℃ x 2min (熱板)。 階梯式曝後烤亦可改善解析度，例如：65℃ x 2 min， 95℃ x 7 min, 105℃ x 2 min。 ㄧ般而言，較高溫度與較長烘烤時間可增加光阻的穩定度，但同時也需要較長的顯影的時間。
晶片冷卻時也建議採階梯式降溫，可避免因降溫速度過快，光阻因應力而產生裂痕。

Development 顯影
AR 300-12 is recommended as standard developer, but also AR 600-07 (fast development) or AR 600-70 (gentle development) is suitable. If AR-N 4600-10 (S) is used for development, no dark erosion is observed even after comparably long development times. If the development with AR 300-12 is performed for too long, increased dark erosion of AR-N 4650-10 may result, and a too long development with AR 600-70 can even cause complete removal.
Stopper AR 600-60 is recommended for a particularly residue-free rinsing after development, followed by rin- sing with DI water. It is also possible to rinse resist layers immediately after development directly with DI water and to dry them on the hotplate.
The sensitivity for a layer thickness of 10 μm is about 110 – 160 mJ/cm2 in the broadband UV range (process description on page 3).

顯影劑一般建議使用AR 300-12。但AR 600-70(顯影速度快)及AR 600-07(顯影速度慢)ㄧ樣適用。AR-N 4600-10(S)即使在長的顯影時間也觀察不到顯影劑對光阻蝕刻的問題.
AR-N 4650-10(R)如果在AR 300-12顯影時間過長，就容易發生顯影劑對光阻蝕刻現象， 在AR 600-70顯影時間過長，甚至會使光阻去除。
AR 600-60建議使用於顯影後,接著再以DI water潤洗。 也可以顯影後直接以DI water潤洗，再以熱板乾燥。
曝光敏感度大約是：10um厚度於寬頻紫外線110 – 160 mJ/cm²

Removal 光阻去除
Coated structures of AR-N 4650-10 (R) can be remo- ved with thinner AR 300-12 or AR 600-70. Depending on the degree of cross-linking (dose, temperature and bake time), required removal times may be considerably longer than 30 minutes.

AR-N 4650-10(R)的結構可被AR 300-12或AR 600-70去除。 依阻劑架橋程度(曝光劑量，烘烤溫度與時間)，一般去除時間會超過30分。