AR 300-12 thinner

AR 300-12 thinner – high purity organic solvent mixtures

For the application of photoresist & EBL resist coating thickness adjustment

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AR 300-12 thinner Product brief 產品簡介

稀釋劑是由高純度有機溶劑混合組成，主要用於調整阻劑膜厚。各類型阻劑經由旋轉參數控制所需厚度；如果調薄參數已達設備極限，可經由稀釋阻劑完成調整目的。

除了調整厚度，產品亦可當洗邊劑及相關設備清潔用途。
系列產品中AR 300-12主要用於稀釋下列阻劑系列：
UV曝光光阻：AR 3000系列 / AR 4000系列 / AR 5000系列
電子束微影阻劑：AR-P 6510 / AR 7000系列

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Packing 產品包裝:
✅ 2.5 L/瓶

其它包裝可依客戶需求增加.

✏️ 價格詢問

✏️ 其它諮詢

Shipping 出貨:

✅ 2 – 4 週。德國出貨。

❎ 1 週。國內庫存。

（本產品暫無國內庫存）

📤 產品GHS標識

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Product Features 產品特性

ultra-filtered, colorless, high-purity organic solvent mixtures
無色，高純度，過濾過的混合有機溶劑。
adjustment of resist film thickness by defined dilution
依計算稀釋以調整適當的膜厚。
edge bead removal of coated substrates as well as cleaning of equipment
可當作洗邊劑及相關設備清潔使用。
removal of photoresist films tempered at up to 150 °C and of non-tempered e-beam resist films
AR 300-12 可當作光阻加溫低於150℃的去除劑，或是未加溫EBL阻劑的去除劑。

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Product properties 產品物性

	AR 300-12
Main components 主要成分	PGMEA
Density at 20℃ (g/cm³) 密度	0.970
Refractive index at 20℃ 折射率	1.402
Water content max. 最大含水量（％)	0.1
Non-volatiles max. 非揮發成份(ppm)	20
Flash point (℃) 閃火點	42
Filtration 過濾規格(um)	0.2
Storage 6 months 儲存溫度( ℃)	10 – 22

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Dedicated thinner for resist 適用阻劑

AR-N 7500 series

AR-N 7500 電子束微影阻劑,亦可於紫外線曝光,適合半導體混搭製程. 阻劑在不同曝光條件下,可為負型或正型。 read
SX AR-N 4340/7

SX AR-N 4340/7 thermal stable negative photoresist For read
AR-N 4600 series

The AR-N 4600 series (Atlas 46) is a negative photoresist suitable f… read
AR-N 4400 series

The AR-N 4400 series Negative Thick Layer photoresist (CAR 44) is su… read
AR-N 4340

AR-N 4340 is a high-sensitivity negative resist suitable for sub-um … read
SX AR-P 3500/8

The SX AR-P 3500/8 is a thermostable positive photoresist suitable f… read
AR-P 5300 series

The AR-P 5300 series is a highly sensitive positive photoresist suit… read
AR-P 3740

AR-P 3740 is a positive i-line photoresist for sub-um semiconductor … read
AR-P 3500 series

The AR-P 3500 series is a standard positive photoresist for semicond… read
AR-P 3200 series

AR-P 3200 series thick positive photoresist High film t read
AR-P 3100 series

The AR-P 3100 series positive photoresist is formulated for enhanced… read
AR-N 7720 series

The AR-N 7720 series is a negative CAR type e-beam lithography resis… read
AR-N 7700 series

The AR-N 7700 series is a chemically enhanced (CAR) negative tone e-… read
AR-N 7520 series

AR-N 7520 series is a negative tone EBL resist suitable for e-beam a… read
AR-P 6510 series

高膜厚(10 – 250um)電子束微影阻劑 high film thickness (10-250um) with e-beam, s… read
AR-N 7520_new series

The AR-N 7520-new series is a negative tone e-beam resist suitable f… read

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AR Thinner family introduction 稀釋劑系列說明

✏️ 價格詢問

✏️其它諮詢

Thinner AR

Properties

300-12

600-02

600-07

600-09

300-74/1

Main components 主要成分

PGMEA

anisole

PGME

乳酸乙酯

乙苯

Density at 20℃ (g/cm³)

0.970⁰

0.990

0.960

1.036

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Refractive index at 20℃ 折射率

1.402

1.517

1.403

1.413

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Water content max.最大含水量

0.1 %

Non-volatiles max. 非揮發成份

20 ppm

Flash point (℃) 閃火點

Filtration 過濾規格(um)

0.2

Production status 生產排程¹

routine¹

Lead time 交期

2 – 4 週

Product packing 產品包裝

2.5 L/瓶

1 L/瓶

Storage 6 months 儲存溫度( ℃)

10 – 22

10 -2 2

10 – 22

GHS label GHS標識

GHS標識

Photoresist AR-P 3000 series

✅

Photoresist AR-N 4000 series

✅

Photoresist AR-P 5000 series

✅

EBL resist AR-P 6510

✅

EBL resist AR-P 7000 series

✅

EBL resist AR-P 6200 series

✅

EBL PMMA 632/642/662/672

✅

EBL resist AR-P 617 series

✅

EBL PMMA 639/649/669/679

✅

Protection resist SXAR-PC 5000/41

✅

Remark：

1. routine: 固定排程生產，交期約2-4週。

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Dilution application 稀釋程序：

Dilution is performed as follows:依下列程序進行稀釋:
1. placing of defined amount of resist,置入需要的阻劑數量。
2. addition of defined amount of thinner,加入需要的稀釋劑數量。
3. homogenization by stirring (both liquids should be mixed quickly)快速的將兩種液體攪拌均勻。
4. fine filtration (0.2 μm).過濾 (規格: 0.2 um)

Information on dilution 稀釋相關資訊：
Higher dilutions of resists may cause gel formation of the polymers which leads to particle deposition in the resist film during the coating step. Diluted resists should therefore be subjected to ultra-filtration (0.2 μm) prior to use. In most cases it is more advantageous to adjust the desired film thickness by varying the spin speed or to utilize a pre- adjusted resist. Special adjustments of thickness values are possible on request for an additional charge.

稀釋阻劑可能形成高分子的膠狀物, 導致塗布時型成顆粒沈積. 建議使用前以0.2um規格過濾.
一般而言,建議以塗布轉速調整膜厚, 或者由原廠事先調好需要的濃度/黏度.
原廠可依需求調整給使用者.

Formula for dilutions 稀釋計算式：
Example: Starting with a resist with 35 % solids content (AR-P 3510), a solids content of 31 % is desired. Requested is the amount of thinner AR 300-12 in g which has to be added to 100 g resist with 35 % solids content (mass m in g, solids content c /100).

If 100.0 g resist (35 % solids content = AR-P 3510) are diluted with 12.9 g thinner in defined
manner, 112.9 g diluted resist (31 % solids content = AR-P 3540) will be obtained.
With this dilution, the film thickness is reduced from 2.0 to 1.4 μm at a spin speed of 4000 rpm.

範例：以AR 300-12稀釋劑將固型份35%的光阻AR-P 3510稀釋至固型份31%。加入的AR 300-12 thinner以g表示，加入100g的AR-P 3510中. 計算式如上。
100g的AR-P 3510以12.9g的稀釋液加入，可得固型份31%的稀釋光阻。約當產品AR-P 3540, 固型份31%

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