AR-PC 5091.02

Electra 92 Product Brief 產品說明

Electra 92 應用於電子束微影或顯微鏡分析,於絕緣基板上塗佈導電層,使電子束曝光時電荷得以逸散.目前有三種產品系列,編號為:
AR-PC 5090.02 適用於：非酚醛樹酯，PMMA，共聚高分子(例：CSAR 62)及HSQ (例Medusa 82)。
AR-PC 5091.02 適用於酚醛樹酯類為基礎的電子束微影阻劑。
AR-PC 5092.02 無選擇性，適合目前各類型阻劑。溶於水，於SEM後，試片不會破壞，仍可使用。

Electra 92 product comparison 產品比較

Properties		AR-PC 5090.02	AR-PC 5091.02	AR-PC 5092.02
Solid content (固型份)	%	2	2	2
Viscosity (黏度)	mPas	1	1	1
Thickness (厚度) vs Spin speed (轉速)	nm rpm	42 – 100 @ 4000 – 1000	31 – 80 @ 4000 – 1000	42 – 100 @ 4000 – 1000
Specific conductivity (@60nm FT)導電度	S/m	～10⁰	～10⁰	～10⁰
Conductive polymer (高分子類型)		polyaniline-derivative	polyaniline-derivative	polyaniline-derivative
Solvent (使用溶劑)		Water & IPA	Water & IPA	Water
Resist compatibilities (適用阻劑類型)		non-novolac PMMA co-polymer (CSAR 62) HSQ (Medusa 82)	novolac base resist	(universal type) novolac base resist PMMA co-polymer (CSAR 62) HSQ (Medusa 82) and others

AR-PC 5091.02 packing & shipping

Packing 產品包裝:

✅ 100 ml/瓶
✅ 250 ml/瓶
✅ 1 L/瓶
其它包裝可依客戶需求增加.

✏️ 價格詢問

✏️ 其它諮詢

Shipping 出貨:

✅ 2 – 4 週：徳國運出
❎ 1 週：國內庫存
(目前暫無國內庫存)

📤 產品GHS標識

AR-PC 5091.02 Features 產品特性

as protective coating, this resist is not sensitive to light / radiation
此導電保護塗佈材料對光/輻射不感應.
thin, conductive layers for the dissipation of charges during electron exposure
塗佈形成導電薄膜使電子束曝光時,電荷得以逸散
coating of novolac-based e-beam resist such as AR-N 7000
適用於酚醛系EBL阻劑,例如: AR-N 7000系列等
long term stable
長期穩定性良好
easy removal with water after exposure
曝光後可輕易以水去除
polyaniline-derivative dissolved in water and IPA
主要成分為溶於水及IPA的聚苯胺衍生物

Product properties 產品物性

AR-PC 5091.02 Property I
Parameter		AR-PC 5091.02
Solid content 固型份	%	2
Viscosity@25℃ 黏度	mPas	1
Film thickness@4000 rpm 膜厚	nm	31
Film thickness@1000 rpm膜厚	nm	80
Resolution / Contrast	nm/–	– –
Flash point 閃火點		39
Storage temperature* 儲存溫度	℃	8 – 12
* Product is guaranteed 6 months shelf life from the data of sale if stored correctly. 在正確的儲存條件下,產品保證的有效期為銷售日起6個月. * Product can also be used without guarantee until the date indicated on the label. 在無提供保證的情況下,產品可使用至標籤上所示的有效期.
AR-PC 5091.02 Property II
Conductivity (@ 60nm FT)	S/m	1.2
Cauchy coefficients	N₀	—
	N₁	—
	N₂	—
Plasma etching rate (nm/min) 5 Pa. 240-250 V Bias)	Ar-sputtering	—
	O₂	185
	CF₄	68
	80 CF₄ + 16 O₂	120

Conductivity 導電度

Resistance measurements of AR-PC 5091.02 layers obtained after spin deposition. For thinner films, the resistance increases and the conductivity decreases.
AR-PC 5091.02的導電度於塗佈後測得. 膜厚越低,其導電阻抗增加而導電度下降. 如圖.
Note: Novolac-based e-beam resists possess other surface properties than CSAR 62 or PMMA. AR-PC 5091 was thus developed with a different solvent mixture. In all other respects however, the polymer composition of AR-PC 5090 and AR-PC 5091 is identical so that both resists are referred to as “Electra 92“.

註：酚醛系阻劑的表面特性與PMMA或CSAR 62不同。AR-5091的溶劑配方適合酚醛系的表面特性。但兩者的高分子成份一樣，實驗代號為Electra 92

REM dissipation of charge 電荷逸散實例

50 nm lines written on glass at a pitch of 150 nm with AR-N 7520.07 and Electra 92
在玻璃基板上以電子束微影寫出線寬50nm，間距150nm圖案.
玻璃基板上塗佈的是負型阻劑AR-N 7520.07及Electra 92導電塗佈

Process parameters
Substrate	4“ wafer quartz/AR-N 7520.07 neu
Coating	60 nm @ 2000 rpm
Soft bake	50℃
—

Process chemicals
Adhesion promoter	—
Developer	—
Thinner	—
Remover	DI-water

Process baseline 製程參數

Application example

AR-N 7700 on glass

Novolac-based e-beam resists possess other surface properties than CSAR 62 or PMMA. E-beam resist AR-N 7700.08 was at first spin coated on glass, dried, coated with Electra 92 and baked at 50 °C. After irradiation, the Electra layer was removed within 1 minute with water and the e-beam resist then developed. The resulting resolution of 60 nm is very high for chemically amplified resists.
酚醛樹脂阻劑表面特性與CSAR 62及PMMA不同以AR-N 7700.08為例,經塗佈,軟烤再塗佈Electra 92導電層,50℃軟烤.電子束曝光後,水洗1分鐘以移除導電層. 隨後對阻劑顯影.上述製程可獲得60nm高解析度的化學放大型阻劑結構

On highly insulating substrate for SEM application

Electrostatic surface charges caused by a deflection of the incident electron beam can be extremely disturbing and interfere with a correct imaging. To avoid this effect, e.g. gold is evaporated onto the sample which however also entails disadvantages since some structures change irreversibly due to thermal effects. Studies demonstrated that the conductive coating Electra 92 can be used as alternative. The coating on electrically highly insulating polymers or glass also enables high-quality images of nanostructures in SEM:
電子顯微鏡應用時,電子束反射所產生的靜電表面電荷會干擾成像. 解決方法可在樣品上蒸度金層, 但蒸鍍時產生的溫度易使樣品變型.研究以Electra 92導電塗層取代蒸鍍,在高絕緣材料,如聚合物,玻璃等,可獲得高品質的奈米結構影像.

After SEM investigation, the conductive coating was completely removed with water, and structures could still be used further.
SEM檢查後,導電層以水洗除,樣品可持續使用

Conductive coating of PMMA resist Thsi diagram shows exemplary process steps Electra92 (AR-PC 5091.02) and ebeam resist AR-N 7520.07 new. All specifications are guideline values which have to be adapted to own specific conditions. 本製程參數是以 AR-PC 5091.02 (Electra 92) 與AR-N 7520.07 new 為範例. 建議使用者依實際材料組合調整參數.
1^st Coating		AR-N 7520.07 new on insulating substrate (quartz, glass, GaAs) 100nm@4000rpm x 60sec
1^st soft bake (±1℃)		85 ℃ x 2 min hot plate, or 85 ℃ x 30 min convection oven
2^nd Coating		SX AR-PC 5000/91.2 (AR-PC 5091.02) 50nm@2000rpm x 50sec
2nd tempering (±1℃)		50°C x 2min hot plate or 45°C x 25min convection oven
e-Beam exposure		Raith Pioneer, 30 kV Exposure dose (E₀): 30 uC/cm² 100nm L/S
Removal (optional) Conductive layer		AR-PC 5091.02 DI water, 60sec (The removal step can also be carried out simultaneously with the subsequent development step)
Development puddle (21-23 ± 0.5℃)		Resist: AR-N 7520.07 new Developer: AR 300-47 x 50sec Rinse: DI-H₂O x 30sec
Post-bake (optional)		85°C x 1min hot plate or 85°C x 25min convection oven for slightly enhanced plasma etching stability
User specific process		Generation of e.g. semiconductor properties, etching, sputtering….
Removal		AR 600-70 or O2 plasma ashing
Process hints The conductivity may be varied by adjusting the thickness with different rotational speeds. Thicker layers of 90 nm thus have a 2.5 times higher conductivity as compared to 60 nm thick layers. In the case that crack formation is observed after tempering of the protective coating, the tempering step can be omitted. For the build-up of an even conductive layer, the substrate should be wetted with the resist solution before the spin process is started. After a certain storage time at room temperature, the coating pattern of Electra may change slightly. To restore the coating pattern, treatment with ultrasound and filtration (0.2 µm) can then be carried out. 導電度可依導電層厚度加以調節。 90nm厚的導電層比60nm厚其導電度高約2.5倍。如果軟烤後有裂痕，可省略軟烤避免產生裂痕。導電層塗佈前先以阻劑的溶劑濕潤基板可獲得較均勻的厚度. 長時間將產品置於室溫下會導致塗佈異常，以超音波處理並過濾（0.2um)可恢復正常。