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resist wiki阻劑百科
分類: resist basic
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Photoresists are light-sensitive and age during storage, so they are supplied in light-protected bot… read 閱讀全文
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This content provides detailed information on the process step of photoresist, including cleaning of… read 閱讀全文
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The development of PMMA films for e-beam lithography involves using solvent-based developers like MI… read 閱讀全文
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The process conditions for coating with resist involve several considerations to avoid the formation… read 閱讀全文
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The addition of photoactive compounds (PACs, naphthoquinone diazide (NQD)) to alkali-soluble novolac… read 閱讀全文
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Polymers such as PMMAs, PMMA co MA, and PMS co Cl-MMA are extensively used in electron beam lithogra… read 閱讀全文
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The photoresist’s photosensitive components are naphthoquinone diazides (NQD), which react to form e… read 閱讀全文
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The main components of resists are solvents, with contents ranging from 50% to 99%. Early resists co… read 閱讀全文
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Photoresists used in microelectronics and microsystems technology create µm- and sub-µm structures. … read 閱讀全文
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The patterning of negative resists is achieved through cross-linking agents, such as radical starter… read 閱讀全文
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