分類: photoresist

The SX AR-N 7100 is a negative photoresist system that utilizes surface imaging and dry development … read 閱讀全文

The content discusses the structuring of polyphthalaldehydes using photolithography. It explains the… read 閱讀全文

Laser ablation involves using laser irradiation to destroy and vaporize resist materials, creating t… read 閱讀全文

A new resist series sensitive to laser exposure in the 500-1100 nm range has been developed, enablin… read 閱讀全文

Polyimides, produced through a 2-step procedure, are suitable for high thermal strain due to their a… read 閱讀全文

This content discusses the use of two-layer polyimide systems for specific applications where the or… read 閱讀全文

The new special resist SX AR-N 4810/1 is a chemically amplified photoresist based on PMMA that offer… read 閱讀全文

The laser ablation of PPA (Phoenix 81) was studied, demonstrating its potential for precise structur… read 閱讀全文

The content discusses the use of photoresists to create fluorescent structures with adjustable emiss… read 閱讀全文