分類: EBL resist

E-beam resists like AR 6000 and AR 7000 series show varying etch resistance in processes such as arg… read 閱讀全文

E-beam resists can achieve resolutions of 2 nm theoretically and up to 10 nm with CSAR resists. PMMA… read 閱讀全文

E-beam resist films can be removed using polar solvents like AR 300-12, AR 600-01, AR 600-07, and AR… read 閱讀全文

E-beam resists require optimal developers for effective patterning. Factors like developer concentra… read 閱讀全文

E-beam resists are exposed using short-wavelength electrons for excellent resolution. Optimum exposu… read 閱讀全文

E-beam resists exhibit varying adhesion strengths to different wafers. While PMMA-, copolymer, and s… read 閱讀全文

The optimal pre-treatment of substrates for e-beam resist application depends on the substrate condi… read 閱讀全文

E-beam resists such as PMMA, copolymer, and styrene acrylate are not light-sensitive in the visible … read 閱讀全文

E-beam resists are used for fabricating highly integrated circuits and masks, allowing the realizati… read 閱讀全文