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resist wiki阻劑百科
分類: EBL resist
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Fluorescent e-beam resists, created using PMMA and CSAR 62 polymers with fluorescence dyes, exhibit … read 閱讀全文
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A variant of Electra 92 is optimized for novolac-based e-beam resists such as AR-N 7520, AR-N 7700, … read 閱讀全文
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The conductivity of resist layers in e-beam lithography is affected by temperature and air humidity.… read 閱讀全文
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This content discusses the use of the CAR 44 negative resist for e-beam lithography, allowing for th… read 閱讀全文
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Atlas 46 has found a new application in electron beam lithography, demonstrating the ability to writ… read 閱讀全文
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The content discusses the calculation of minimum exposure time for a specific area at a given dose. … read 閱讀全文
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Electron-beam lithography (EBL) offers unlimited resolution due to the small wavelength of 25keV ele… read 閱讀全文
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When a high-energy electron beam is directed onto a resist layer, it causes both forward and backwar… read 閱讀全文
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SCALPEL, or Scattering with Angular Limitation Projection Electron-beam Lithography, is a mask-based… read 閱讀全文
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The content discusses the raster and vector scan principles in electron beam lithography. Raster sca… read 閱讀全文
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