Waterfree developable special resist SX AR-N 4810/1
The new special resist SX AR-N 4810/1 is a chemically enhanced photo resist based on PMMA, which can be developed waterfree – crucial in the case of moisture-sensitive substrates – with organic solvents. SX AR-N 4810/1 is offered as a solution in anisole and contains, besides PMMA, crosslinkers and aminic components. X AR 300-74/1 or MIBK are suitable developers.
With the resist system, thicker layers up to 3,5 µm can be realized as well. Our developer X AR 300-74/3 is particularly well suited for maximum coating thickness, the sensitivity is in the range of approximately 600 – 650 mJ/cm2 (broadband UV). The resulting structures are stable up to 230 °C and transparent in the optical wavelength range >300 nm.
Overview of photoresist-others
Alkali-stable positive resist obtained after treatment with HMDS
Aqueous negative resist based on gelatine
Atlas 46 for nanoimprint lithography
Ethanol and toluene-resistant photoresist AR-U 4060
Fluorescent resist structures with photoresists
Laser ablation of PPA (Phoenix 81)
Negative CAR PMMA resist SX AR-N 4810/1
Positive polyimide one-layer resist
Resist for near infrared (NIR)
Structuring by ablation of the resist materials
Structuring of polyphthalaldehydes with photolithography
Surface imaging resist system SX AR-N 7100 – silylable photoresist
Top surface imaging (TSI) photoresist – principles
Two-layer photoresist system for water-sensitive substrates
Two-layer resist system for hydrofluoric acid etching
UV-structuring of PMMA resists
Waterfree developable special resist SX AR-N 4810/1