Resist composition-general
The resists most widely used by far are the positive photo resists, followed by negative photo resists. However, there are other special resists as well.
Image reversal resists are positive resists with an additional amine. Depending on the manufacturing process, positive or negative images can be generated. Moreover, there are special resists such as the positive polyimide resists and negative polyimide resists (high temperature application > 400 °C, polymer polyimide), negative polyhydroxystyrene resists (high temperature application > 300 °C), negative PMMA photo resists (non-aqueous development for sensitive substrates, polymer PMMA and cross-linker), positive and negative two-layer photo resists (lift-off technology, polymer copolymer PMMA).
Overview of photoresist-others
Alkali-stable positive resist obtained after treatment with HMDS
Aqueous negative resist based on gelatine
Atlas 46 for nanoimprint lithography
Ethanol and toluene-resistant photoresist AR-U 4060
Fluorescent resist structures with photoresists
General: Resist composition
Laser ablation of PPA (Phoenix 81)
Negative CAR PMMA resist SX AR-N 4810/1
Positive polyimide one-layer resist
Resist for near infrared (NIR)
Structuring by ablation of the resist materials
Structuring of polyphthalaldehydes with photolithography
Surface imaging resist system SX AR-N 7100 – silylable photoresist
Top surface imaging (TSI) photoresist – principles
Two-layer photoresist system for water-sensitive substrates
Two-layer resist system for hydrofluoric acid etching
UV-structuring of PMMA resists
Waterfree developable special resist SX AR-N 4810/1