Ethanol and toluene-resistant photoresist AR-U 4060
Structures of the image reversal resist AR-U 4060 show an increased resistance against organic solvents after flood exposure with subsequent tempering. Ethanol and toluene attack normal positive resist layers quickly, which are consequently dissolved in short time. If AR-U 4060 is flood exposed after patterning (2 minutes) and tempered at 110 °C, the structures remain stable for several hours or even over night after a tempering at 120 °C. The same effect can be obtained in ethanol by flood exposure for 5 minutes and tempering at 150 °C. The surface remains unscathed over night. Removal is in this case possible with remover AR 300-73.
Overview of photoresist-others
Alkali-stable positive resist obtained after treatment with HMDS
Aqueous negative resist based on gelatine
Atlas 46 for nanoimprint lithography
Ethanol and toluene-resistant photoresist AR-U 4060
Fluorescent resist structures with photoresists
Laser ablation of PPA (Phoenix 81)
Negative CAR PMMA resist SX AR-N 4810/1
Positive polyimide one-layer resist
Resist for near infrared (NIR)
Structuring by ablation of the resist materials
Structuring of polyphthalaldehydes with photolithography
Surface imaging resist system SX AR-N 7100 – silylable photoresist
Top surface imaging (TSI) photoresist – principles
Two-layer photoresist system for water-sensitive substrates
Two-layer resist system for hydrofluoric acid etching