Aqueous negative resist based on gelatine
In the presence of catalytic iron salts, it is possible to photochemically induce a negative crosslinking of gelatine. Coated substrates are for this purpose exposed and briefly swivelled in diluted hydrogen peroxide solution which acts as crosslinking agent. Non-exposed areas can subsequently simply be rinsed off with warm water. The obtained structures are thermally stable up to about 250°C and only marginal colour changes are observed upon intense heating. A removal is easily possible with diluted sodium hydroxide solution. A major advantage of gelatine resists is their good environmental tolerability, since organic solvents can be omitted completely. The resist is suitable for applications in photovoltaics and for solvent-free processes.
Overview of photoresist-others
Alkali-stable positive resist obtained after treatment with HMDS
Aqueous negative resist based on gelatine
Atlas 46 for nanoimprint lithography
Ethanol and toluene-resistant photoresist AR-U 4060
Fluorescent resist structures with photoresists
Laser ablation of PPA (Phoenix 81)
Negative CAR PMMA resist SX AR-N 4810/1
Positive polyimide one-layer resist
Resist for near infrared (NIR)
Structuring by ablation of the resist materials
Structuring of polyphthalaldehydes with photolithography
Surface imaging resist system SX AR-N 7100 – silylable photoresist
Top surface imaging (TSI) photoresist – principles
Two-layer photoresist system for water-sensitive substrates
Two-layer resist system for hydrofluoric acid etching