NIR-laser structurable photoresists
By adding suitable dyes to negative-working CAR resists, even a patterning beyond the usual wavelength range is possible if pulsed lasers with sufficiently high intensity are used for exposure. Relevant laser wavelengths are for example 532 nm and 1064 nm. The dye, which intensively absorbs in the respective wavelength range, is heated during exposure and consequently induces a crosslinking reaction in the resist film. Many users of laser systems do not operate under yellow light conditions. It is thus essential to use photosensitive compounds which are stable under white light and only activated and crosslinked upon exposure to UV light with a wavelength of less than 300 nm.
Overview of negative photoresist
Alkali-stable and solvent-stable negative resist
Chemically enhanced negative resist (Process parameters and resolution)
Chemically enhanced negative resist without cross-linking
Coloured negative photoresists
Development of thick negative resist layer
Dose-dependent structure size with negative resists
Fabrication of vertical flanks with CAR 44
Generation of undercut structures with negative resists
Negative polyimide photoresist
Negative two- layer lift-off system
NIR-laser structurable photoresists
poly(hydroxystyrene) and (hydroxystyrene-co-MMA) photoresist with high-temperature stability
Sensitive negative PMMA resist (CAR)
Sensitive negative resist for 405 nm laser direct exposure