Solvents in e-beam resists
The beginning of electron beam lithography dates back to the early 1980s when the first PMMA resists were developed, with chlorobenzene as first solvent. This solvent most efficiently dissolves the various PMMAs (with different molecular masses of 50K to 950K) and thus also allows high solid matter content and the generation of thick films during the coating step. Furthermore, the quality of chlorobenzene PMMA resist coatings is excellent.
With respect to health-related issues, however, chlorobenzene is not the first choice. Evaluating the health-hazardous aspects of solvents, anisole performed significantly better in this respect. Today, PMMA resists are consequently offered worldwide with anisole as solvent. Allresist furthermore provides ethyl lactate-containing resists which are even less harmful. A small disadvantage of ethyl lactate PMMA resists is however the low solubility of the polymers in the solvent, which only allows the manufacture of films with relatively low thicknesses.
The different solvents exhibit no influence on further process parameters of resist films, since the solvent is expelled after the soft bake (150–180°C). PMMA films have identical lithographic properties, even if these films were originally generated with different solvents.
New developer X AR 600-50/1 for the AR-P 617
The solvent ethyl glycol was downgraded with regard to health and safety. This solvent is contained in the „old“ developer AR 600-50, which was especially produced for the development of the copolymer layers of AR-P 617. On behalf of our customers, we have devised the new developer X AR 600-50/1 from safer solvents for this resist. The application characteristics of both developers are very similar. In the foreseeable future, the new developer will replace the old one entirely.
Related articles EBL positive
CSAR 62 related
3-layer system CSAR/PMMAcoMA/PMMA
3-layer system for T-gate CSAR/PMMAcoMA/PMMA
BOE etching of SiO2 with CSAR 62 mask
Collapse of extreme high-resolution e-beam resist structures
CSAR 62 Avoidance of particles during large-area exposures
CSAR 62 – Development at low temperatures
CSAR 62 – Experimental studies on new, sensitive developers
CSAR 62 lift-off for thick layers
CSAR 62 nanostructures written at 100 kV
CSAR 62 single layer lift-off system
Evaluation of various developers for e-beam exposed CSAR 62 layers (100 kV)
HF etching of GaAs with CSAR 62 masks
Manufacture of plasmonic nanostructures with CSAR 62
Use of CSAR 62 for the manufacture of nanostructures on GaAs substrates